71. Grams. S. Lin and you can J. B. Kuo, “Fringing-Created Slim-Channel-Feeling (FINCE) Associated Capacitance Behavior away from Nanometer FD SOI NMOS Gadgets Playing with Mesa-Separation Via 3d Simulator” , EDSM , Taiwan ,

72. J. B. Kuo, “Advancement off Bootstrap Techniques in Lowest-Voltage CMOS Digital VLSI Circuits to possess SOC Programs” , IWSOC , Banff, Canada ,

P. Yang, “Door Misalignment Perception Associated Capacitance Decisions of good 100nm DG FD SOI NMOS Tool having n+/p+ Poly Top/Base Gate” , ICSICT , Beijing, China

73. Grams. Y. Liu, N. C. Wang and J. B. Kuo, “Energy-Efficient CMOS High-Stream Driver Circuit for the Subservient Adiabatic/Bootstrap (CAB) Way of Lowest-Electricity TFT-Lcd Program Programs” , ISCAS , Kobe, Japan ,

74. Y. S. Lin, C. H. Lin, J. B. Kuo and you will K. W. Su, “CGS Capacitance Technology regarding 100nm FD SOI CMOS Equipment which have HfO2 High-k Door Dielectric Offered Vertical and you can Fringing Displacement Consequences” , HKEDSSC , Hong-kong ,

75. J. B. KUo, C. H. Hsu and you can C. P. Yang, “Gate-Misalignment Relevant Capacitance Decisions of a great 100nm DG SOI MOS Equipment that have N+/p+ Top/Bottom Entrance” , HKEDSSC , Hong kong ,

76. G. Y. Liu, N. C. Wang and you may J. B. Kuo, “Energy-Effective CMOS Higher-Weight Rider Circuit on the Subservient Adiabatic/Bootstrap (CAB) Technique for Lowest-Power TFT-Lcd System Applications” , ISCAS , Kobe, The japanese ,

77. H. P. Chen and you may J. B. Kuo, “A great 0.8V CMOS TSPC Adiabatic DCVS Reason Circuit with the Bootstrap Technique getting Low-Electricity VLSI” , ICECS , Israel ,

B. Kuo, “A book 0

80. J. B. Kuo and you will H. P. Chen, “The lowest-Voltage CMOS Stream Rider to your Adiabatic and you can Bootstrap Methods for Low-Electricity System Programs” , MWSCAS , Hiroshima, Japan ,

83. Yards. T. Lin, Age. C. Sunrays, and you can J. B. Kuo, “Asymmetric Entrance Misalignment Affect Subthreshold Characteristics DG SOI NMOS Equipment Provided Fringing Electric Field-effect” , Electron Products and you may Topic Symposium ,

84. J. B. Kuo, Age. C. Sun, and M. T. Lin, “Analysis of Door Misalignment Effect on the new Endurance Voltage regarding Twice-Gate (DG) Ultrathin FD SOI NMOS Gadgets Having fun with a tight Model Considering Fringing Electric Field effect” , IEEE Electron Gadgets to have Microwave oven and you may Optoelectronic Apps ,

86. Age. Shen and you may J. 8V BP-DTMOS Stuff Addressable Thoughts Cell Circuit Derived from SOI-DTMOS Processes” , IEEE Appointment on Electron Products and you can Solid-state Circuits , Hong kong ,

87. P. C. Chen and J. B. Kuo, “ic Reason Routine Playing with a primary Bootstrap (DB) Way of Lowest-voltage CMOS VLSI” , In the world Symposium toward Circuits and Systems ,

89. J. B. Kuo and S. C. Lin, “Lightweight Description Design to have PD SOI NMOS Devices Considering BJT/MOS Effect Ionization having Spice Circuits Simulator” , IEDMS , Taipei ,

90. J. B. Kuo and you may S. C. Lin, “Lightweight LDD/FD SOI CMOS Unit Design Offered Time Transport and Thinking Temperatures getting Spruce Circuit Simulation” , IEDMS , Taipei ,

91. S. C. Lin and you may J. B. Kuo, “Fringing-Created Burden Lowering (FIBL) Ramifications of 100nm FD SOI NMOS Gadgets with a high Permittivity Entrance Dielectrics and you may LDD/Sidewall Oxide Spacer” , IEEE SOI Meeting Proc , Williamsburg ,

ninety-five. J. B. Kuo and S. C. Lin, “New Fringing Digital Field effect on the Brief-Route Feeling Tolerance Current away from FD SOI NMOS Equipment having LDD/Sidewall Oxide Spacer Framework” , Hong-kong Electron Equipment Fulfilling ,

93. C. L. Yang and J. B. Kuo, “High-Temperature Quasi-Saturation Model of Higher-Voltage DMOS Power Products” , Hong-kong Electron Products Meeting ,

94. Elizabeth. Shen and you can J. B. Kuo, “0.8V CMOS Content-Addressable-Memories (CAM) Cell Ciurcuit with an instant Level-Evaluate Abilities Using Majority PMOS Dynamic-Endurance (BP-DTMOS) Method Based on Basic CMOS Tech to have Reasonable-Voltage VLSI Solutions” , Global Symposium for the Circuits and you may Possibilities (ISCAS) Proceedings , Arizona ,